丁子君

2013年6月毕业于南京航空航天大学 有机化学专业 获理学硕士学位；

2019年6月毕业于复旦大学 微电子学与固体电子学专业 获理学博士学位；

2019年12月进入同济大学电信学院实验中心工作。

发表论文：

1. Z. J. Ding, Y. P. Wang, W. J. Liu, S. J. Ding, M. R. Baklanov and D. W. Zhang. Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen. Journal of Physics D: Applied Physics. 51(11), 115103 (2018) (SCI, Impact Factor=2.707)

2. Z. J. Ding#, B. Zhu#, X. H. Wu, W. J. Liu, D. W. Zhang and S. J. Ding. Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor. Nanoscale Research Letters. 14(1), 76 (2019) (SCI, Impact Factor=3.333)

3. Z. J. Ding, B. Zhu, W. J. Liu, S. J. Ding. Effect of NH3 plasma pulse time on atomic layer deposited TiN films using tetrakis-(dimethylamino) titanium as metal precursor. 58, SHHA02 (2019) Japanese Journal of Applied Physics.(SCI, Impact Factor=1.384)

4. Y. P Wang, Z. J. Ding. Q. X. Liu, W. J. Liu, S. J. Ding and D. W. Zhang. Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors. Journal of Materials Chemistry C. 4 (47), 11059(2016) (SCI, Impact Factor=5.256)

5. Y. P Wang, Z. J. Ding. B. Zhu, W. J. Liu, S. J. Ding and D. W. Zhang. Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier. Journal of Vacuum Science and Technology A. 36(3), 031502 (2018) (SCI, Impact Factor=1.314)